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AUIRFR/U4105Z
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
R DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.053
19
–––
24.5
V/°C Reference to 25°C, I D = 1mA
m ? V GS = 10V, I D = 18A
V GS(th)
gfs
I DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
2.0
16
–––
–––
–––
–––
4.0
–––
20
V
S
μA
V DS = V GS , I D = 250μA
V DS = 15V, I D = 18A
V DS = 55V, V GS = 0V
–––
–––
250
V DS = 55V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
200
-200
nA
V GS = 20V
V GS = -20V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q g
Total Gate Charge
–––
18
27
I D = 18A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
5.3
7.0
10
40
26
24
–––
–––
–––
–––
–––
–––
nC
ns
V DS = 44V
V GS = 10V
V DD = 28V
I D = 18A
R G = 24.5 ?
V GS = 10V
L D
Internal Drain Inductance
–––
4.5
–––
Between lead,
D
L S
C iss
C oss
C rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
7.5
740
140
74
–––
–––
–––
–––
nH
pF
6mm (0.25in.)
from package
and center of die contact
V GS = 0V
V DS = 25V
? = 1.0MHz
G
S
C oss
C oss
C oss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
450
110
180
–––
–––
–––
V GS = 0V, V DS = 1.0V, ? = 1.0MHz
V GS = 0V, V DS = 44V, ? = 1.0MHz
V GS = 0V, V DS = 0V to 44V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
30
MOSFET symbol
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
120
integral reverse
(Body Diode)
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
14
1.3
29
21
V
ns
nC
T J = 25°C, I S = 18A, V GS = 0V
T J = 25°C, I F = 18A, V DD = 28V
di/dt = 100A/μs
t on
2
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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